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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27586

Title: Upside-down tuning of light- and heavy-hole states in GaNAs/GaAs single quantum wells by thermal expansion and quantum confinement
Authors: M. H. Ya;W. Z. Cheng;Y. F. Chen;T. Y. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: gallium arsenide;III-V semiconductors;semiconductor quantum wells;photoluminescence;thermal expansion;internal stresses;valence bands;interface states
Date: 2002-10-28
Issue Date: 2011-10-21T02:32:14Z
Publisher: Applied Physics Letters
Abstract: Abstract:Polarization resolved photoluminescence from a cleaved sample edge (edge photoluminescence) was used to investigate the valence-band splitting in GaNAs/GaAs single quantum wells. The spectra resulting from the heavy- and light-hole transitions shows an interesting phenomenon, in which the light-hole state is above the heavy-hole state at low temperatures, they degenerate at about 195 K, and finally the light-hole state is below the heavy-hole state at higher temperatures. We point out that the underlying origin of our observation can be attributed to the competitive effect between the tensile strain induced by lattice mismatch and quantum confinement. It is known that the large density of heavy-hole states is beneficial for laser diodes. Our result is therefore very useful for the application of GaNAs/GaAs quantum wells in optical devices.
Relation: 81(18), pp.3386-3388
URI: http://ntour.ntou.edu.tw/handle/987654321/27586
Appears in Collections:[光電科學研究所] 期刊論文

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