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题名: Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells
作者: T. Y. Lin
贡献者: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
关键词: indium compounds;gallium compounds;semiconductor quantum wells;III-V semiconductors;wide band gap semiconductors;piezoelectric semiconductors;phonons;photoluminescence;photoelasticity;refractive index;spectral line shift;Raman spectra
日期: 2003-02-10
上传时间: 2011-10-21T02:32:14Z
出版者: Applied Physics Letters
摘要: Abstract:We present microphotoluminescence and microRaman measurements with different optical excitation intensities in InGaN/GaN multiple quantum wells (MQWs). When the optical excitation density was increased, the InGaN A1(LO) phonon was found to show a redshift in frequency and a blueshift in photoluminescence spectra has been observed. The change in the refractive index of MQWs was found to be strongly related to the blueshift of photoluminescence spectra and the redshift of the InGaN A1(LO) phonon. Our results firmly establish that a converse piezoelectric effect responsible for a considerable photoelastic effect (change in refractive index produced by a strain) arising from the optical modulation does exist in InGaN/GaN MQWs.
關聯: 82(6), pp.880-882
URI: http://ntour.ntou.edu.tw/handle/987654321/27585
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