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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27585

Title: Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells
Authors: T. Y. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: indium compounds;gallium compounds;semiconductor quantum wells;III-V semiconductors;wide band gap semiconductors;piezoelectric semiconductors;phonons;photoluminescence;photoelasticity;refractive index;spectral line shift;Raman spectra
Date: 2003-02-10
Issue Date: 2011-10-21T02:32:14Z
Publisher: Applied Physics Letters
Abstract: Abstract:We present microphotoluminescence and microRaman measurements with different optical excitation intensities in InGaN/GaN multiple quantum wells (MQWs). When the optical excitation density was increased, the InGaN A1(LO) phonon was found to show a redshift in frequency and a blueshift in photoluminescence spectra has been observed. The change in the refractive index of MQWs was found to be strongly related to the blueshift of photoluminescence spectra and the redshift of the InGaN A1(LO) phonon. Our results firmly establish that a converse piezoelectric effect responsible for a considerable photoelastic effect (change in refractive index produced by a strain) arising from the optical modulation does exist in InGaN/GaN MQWs.
Relation: 82(6), pp.880-882
URI: http://ntour.ntou.edu.tw/handle/987654321/27585
Appears in Collections:[光電科學研究所] 期刊論文

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