Please use this identifier to cite or link to this item:
|Title: ||Optical properties of GaN/AlN multiple quantum wells|
|Authors: ||T.Y Lin;Y.M Sheu;Y.F Chen;J.Y Lin;H.X Jiang|
|Contributors: ||NTOU:Institute of Optoelectronic Sciences|
|Keywords: ||A. Quantum wells;E. Photoluminescence;E. Strain|
|Issue Date: ||2011-10-21T02:32:14Z
|Publisher: ||Solid State Communications|
|Abstract: ||Abstract:Optical properties of GaN/AlN multiple quantum wells (MQW) have been investigated by Raman scattering, photoluminescence and photoluminescence excitation measurements. A careful examination of the Raman spectrum reveals the fact that the constituent layers of GaN/AlN MQWs are well strained. The experimental results of emission and absorption in MQWs were compared with the calculated solutions of the finite quantum well and the bound states involved in the optical transitions were identified. It is found that the interband transitions up to n=3 bound state can be observed in the strained GaN/AlN MQWs sample. The temperature dependence of the heavy-hole transitions shows an interesting phenomenon, in which the peak energy first increases with increasing temperature and then decreases with the temperature rapidly. The observation can be explained in a consistent way by the strain effects of lattice mismatch due to the interplay between the thermal expansion of GaN and AlN layers. Our results indicate that pseudomorphic GaN/AlN MQWs with good quality can be readily grown, and their applications in optoelectronics can be expected in the near future. PACS 78.66.H;78.55.E;78.30.F|
|Relation: ||131(6), pp.389-392|
|Appears in Collections:||[光電科學研究所] 期刊論文|
Files in This Item:
There are no files associated with this item.
All items in NTOUR are protected by copyright, with all rights reserved.