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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27584

Title: Optical properties of GaN/AlN multiple quantum wells
Authors: T.Y Lin;Y.M Sheu;Y.F Chen;J.Y Lin;H.X Jiang
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: A. Quantum wells;E. Photoluminescence;E. Strain
Date: 2004-08
Issue Date: 2011-10-21T02:32:14Z
Publisher: Solid State Communications
Abstract: Abstract:Optical properties of GaN/AlN multiple quantum wells (MQW) have been investigated by Raman scattering, photoluminescence and photoluminescence excitation measurements. A careful examination of the Raman spectrum reveals the fact that the constituent layers of GaN/AlN MQWs are well strained. The experimental results of emission and absorption in MQWs were compared with the calculated solutions of the finite quantum well and the bound states involved in the optical transitions were identified. It is found that the interband transitions up to n=3 bound state can be observed in the strained GaN/AlN MQWs sample. The temperature dependence of the heavy-hole transitions shows an interesting phenomenon, in which the peak energy first increases with increasing temperature and then decreases with the temperature rapidly. The observation can be explained in a consistent way by the strain effects of lattice mismatch due to the interplay between the thermal expansion of GaN and AlN layers. Our results indicate that pseudomorphic GaN/AlN MQWs with good quality can be readily grown, and their applications in optoelectronics can be expected in the near future. PACS 78.66.H;78.55.E;78.30.F
Relation: 131(6), pp.389-392
URI: http://ntour.ntou.edu.tw/handle/987654321/27584
Appears in Collections:[光電科學研究所] 期刊論文

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