National Taiwan Ocean University Institutional Repository:Item 987654321/27583
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题名: Density-dependent energy relaxation of hot electrons in InN epilayers
作者: M. D. Yang;Y. W. Liu;J. L. Shen;C. W. Chen;G. C. Chi;T. Y. Lin;W. C. Chou;M. H. Lo;H. C. Kuo;T. C. Lu
贡献者: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
关键词: electron density;III-V semiconductors;indium compounds;phonons;photoluminescence;piezoelectricity;semiconductor epitaxial layers;wide band gap semiconductors
日期: 2009-01-01
上传时间: 2011-10-21T02:32:14Z
出版者: Journal of Applied Physics
摘要: Abstract:This work investigates the dependence of the hot-electron energy relaxation in InN epilayers on electron density. From the high-energy tail of photoluminescence, the electron temperature of the hot electrons was determined. Acoustic phonons have an important role in the energy relaxation of the hot electrons. The density-dependent electron energy loss rate in InN can be explained by a combination of longitudinal optical and acoustic phonon emissions. A slowing of energy loss rate at high electron densities was observed and attributed to piezoelectric coupling to acoustic phonons.
關聯: 105(1), pp.013526-013526-05
URI: http://ntour.ntou.edu.tw/handle/987654321/27583
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