National Taiwan Ocean University Institutional Repository:Item 987654321/27583
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 28588/40619
Visitors : 4202493      Online Users : 60
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Density-dependent energy relaxation of hot electrons in InN epilayers
Authors: M. D. Yang;Y. W. Liu;J. L. Shen;C. W. Chen;G. C. Chi;T. Y. Lin;W. C. Chou;M. H. Lo;H. C. Kuo;T. C. Lu
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: electron density;III-V semiconductors;indium compounds;phonons;photoluminescence;piezoelectricity;semiconductor epitaxial layers;wide band gap semiconductors
Date: 2009-01-01
Issue Date: 2011-10-21T02:32:14Z
Publisher: Journal of Applied Physics
Abstract: Abstract:This work investigates the dependence of the hot-electron energy relaxation in InN epilayers on electron density. From the high-energy tail of photoluminescence, the electron temperature of the hot electrons was determined. Acoustic phonons have an important role in the energy relaxation of the hot electrons. The density-dependent electron energy loss rate in InN can be explained by a combination of longitudinal optical and acoustic phonon emissions. A slowing of energy loss rate at high electron densities was observed and attributed to piezoelectric coupling to acoustic phonons.
Relation: 105(1), pp.013526-013526-05
Appears in Collections:[Institute of Optoelectronic Sciences] Periodical Articles

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback