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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27581

Title: Growth and Characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N2O
Authors: Kuo-Yi Yen;Kuang-Pi Liu;Jyh-Rong Gong;Kuen-Yau Tsai;Dong-Yuan Lyu;Tai-Yuan Lin;Guo-Yu Ni;Far-Wen Jih
Contributors: NTOU:Institute of Optoelectronic Sciences
Date: 2009-12
Issue Date: 2011-10-21T02:32:13Z
Publisher: Journal of Materials Science: Materials in Electronics
Abstract: Abstract:Zinc oxide (ZnO) films were grown on (11-20) sapphire substrates at 600 °C by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O). A ZnO buffer layer was deposited at low temperature (LT) prior to the growth of a bulk ZnO film for a typical growth run. In some cases, buffer-layer annealing or post-annealing treatments were employed to optimize ZnO growth. Based on the experimental results of X-ray diffractometry (XRD) and transmission electron microscopy (TEM), all the as-grown ZnO films were found to show c-axis preferred orientation with co-existence of <1-100>ZnO∥<1-100>sapphire and <11-20>ZnO∥<1-100>sapphire relationships in the (0001)ZnO/(11-20)sapphire hetero-interface. Typical room temperature (RT) photoluminescence (PL) spectrum of the as-grown ZnO film shows only near band edge (NBE) emissions without defect luminescence. ZnO films with improved quality were achieved by post-annealing or buffer-layer annealing treatments. In particular, buffer-layer annealing was found to improve the crystalline and optical properties of a ZnO film substantially.
Relation: 20(12), pp.1255-1259
URI: http://ntour.ntou.edu.tw/handle/987654321/27581
Appears in Collections:[光電科學研究所] 期刊論文

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