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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27580

Title: Spectral dependence of time-resolved photoreflectance of InN epitaxial films
Authors: Tsong-Ru Tsai;Cheng-Yu Chang;Chih-Wei Kuo;Jih-Shang Hwang;Tai-Yuan Lin;Shangjr Gwo
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: Auger effect;electron relaxation time;electron-hole recombination;III-V semiconductors;indium compounds;photoreflectance;semiconductor epitaxial layers;time resolved spectra
Date: 2009-10-05
Issue Date: 2011-10-21T02:32:13Z
Publisher: Applied Physics Letters
Abstract: Abstract:Femtosecond pulses at wavelengths ranging from 750 to 900 nm (1.38–1.65 eV) were used in the excitation and probing of ultrafast carrier dynamics in InN epitaxial films. Experimental results show that the hot electron relaxation rate increases with increasing electron energy, which is measured as E0.53. This observation agrees with the prediction of electron-electron scattering relaxation mechanism. In addition, the electron-hole recombination rates are independent of the electron energy and have values of ∼ 7×109 Hz. We attribute this result to the Auger recombination in InN being insensitive to temperature.
Relation: 95(14), pp.142108-1-142108-3
URI: http://ntour.ntou.edu.tw/handle/987654321/27580
Appears in Collections:[光電科學研究所] 期刊論文

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