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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27579

Title: Self- limiting growth of ZnO films on (0001) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide
Authors: Yen-Ting Lin;Ping-Han Chung;Hung-Wei Lai;Hsin-Lun Su;Dong-Yuan Lyu;Kuo-Yi Yen;Tai-Yuan Lin;Chung-Yuan Kung;Jyh-Rong Gong
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: ZnO;Atomic layer deposition;Absorption spectroscopy
Date: 2009-11-15
Issue Date: 2011-10-21T02:32:13Z
Publisher: Applied Surface Science
Abstract: Abstract:Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N2O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 °C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 °C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N2O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N2O precursors.
Relation: 256(3), pp.819-822
URI: http://ntour.ntou.edu.tw/handle/987654321/27579
Appears in Collections:[光電科學研究所] 期刊論文

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