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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27578

Title: Optical polarization and internal quantum efficiency for InGaN quantum wells on a-plane GaN
Authors: E.Y. Lin;C.Y. Chen;T.S. Lay;Z.X. Peng;T.Y. Lin;T.C. Wang;J.D. Tsay
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: a-plane GaN;Photoluminescence;Polarization;Internal quantum efficiency
Date: 2010-04-01
Issue Date: 2011-10-21T02:32:12Z
Publisher: Physica B
Abstract: Abstract:Non-polar a-plane (1 1 –2 0) InGaN/GaN multiple quantum wells have been grown by metal-organic chemical vapor deposition on r-plane sapphire substrates. An optical polarization analysis was performed using edge-emitting and surface-emitting photoluminescence measurements. Non-polar a-plane MQWs show a lower transverse electric/transverse magnetic polarization ratio because of the reduced piezoelectric field in the growth direction. A strong polarization was observed in the surface-emitting spectrum for a-plane MQWs. The anisotropic polarization has an angle of 120° between the maximum and minimum components for the a-plane InGaN/GaN MQWs. In addition, this analysis revealed a lateral localized confinement in a-plane InGaN/GaN MQWs due to anisotropic growth along the GaN (1 –1 0 0) and (1 1 –2 0) directions. The internal quantum efficiency of a-plane and c-plane InGaN/GaN MQWs was obtained in the temperature- and power-dependent surface-emitting PL spectra.
Relation: 405(7), pp.1857-1860
URI: http://ntour.ntou.edu.tw/handle/987654321/27578
Appears in Collections:[光電科學研究所] 期刊論文

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