English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26988/38789
Visitors : 2317390      Online Users : 40
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27550

Title: The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer
Authors: K.J. Chang;S.M. Lahn;Z.J. Xie;J.Y. Chang;W.Y. Uen;T.U. Lu;J.H. Lin;T.Y. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: A1. Characterization;A2. Metalorganic chemical vapor deposition;B2. Semiconducting III–VI materials B2. Indium selenide
Date: 2007-08-15
Issue Date: 2011-10-21T02:32:08Z
Publisher: Journal of Crystal Growth(J. Crystal. Growth)
Abstract: Abstract:Single-phase γ-In2Se3 thin films have been prepared on Si(1 1 1) substrate by metalorganic chemical vapor deposition technique using dual-source precursors: trimethylindium and hydrogen selenide. The films have been characterized by X-ray diffraction and scanning electron microscopy. The crystalline quality and surface morphology of single-phase γ-In2Se3 films are much improved by introducing an AlN buffer layer. The optical properties of the films have been studied by temperature dependent photoluminescence (PL) measurements. The single-phase γ-In2Se3 films that we obtained have strong free exciton emissions of 2.14 eV at 10 K. The band gap of single-phase γ-In2Se3 at room temperature is estimated at 1.94 eV.
Relation: 306(2), pp.283-287
URI: http://ntour.ntou.edu.tw/handle/987654321/27550
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat
index.html0KbHTML296View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback