Abstract:Single-phase γ-In2Se3 thin films have been prepared on Si(1 1 1) substrate by metalorganic chemical vapor deposition technique using dual-source precursors: trimethylindium and hydrogen selenide. The films have been characterized by X-ray diffraction and scanning electron microscopy. The crystalline quality and surface morphology of single-phase γ-In2Se3 films are much improved by introducing an AlN buffer layer. The optical properties of the films have been studied by temperature dependent photoluminescence (PL) measurements. The single-phase γ-In2Se3 films that we obtained have strong free exciton emissions of 2.14 eV at 10 K. The band gap of single-phase γ-In2Se3 at room temperature is estimated at 1.94 eV.