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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27550

Title: The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer
Authors: K.J. Chang;S.M. Lahn;Z.J. Xie;J.Y. Chang;W.Y. Uen;T.U. Lu;J.H. Lin;T.Y. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: A1. Characterization;A2. Metalorganic chemical vapor deposition;B2. Semiconducting III–VI materials B2. Indium selenide
Date: 2007-08-15
Issue Date: 2011-10-21T02:32:08Z
Publisher: Journal of Crystal Growth(J. Crystal. Growth)
Abstract: Abstract:Single-phase γ-In2Se3 thin films have been prepared on Si(1 1 1) substrate by metalorganic chemical vapor deposition technique using dual-source precursors: trimethylindium and hydrogen selenide. The films have been characterized by X-ray diffraction and scanning electron microscopy. The crystalline quality and surface morphology of single-phase γ-In2Se3 films are much improved by introducing an AlN buffer layer. The optical properties of the films have been studied by temperature dependent photoluminescence (PL) measurements. The single-phase γ-In2Se3 films that we obtained have strong free exciton emissions of 2.14 eV at 10 K. The band gap of single-phase γ-In2Se3 at room temperature is estimated at 1.94 eV.
Relation: 306(2), pp.283-287
URI: http://ntour.ntou.edu.tw/handle/987654321/27550
Appears in Collections:[光電科學研究所] 期刊論文

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