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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27549

Title: Ultrafast hot electron relaxation time anomaly in InN epitaxial films
Authors: Tsong-Ru Tsai;Chih-Fu Chang;S. Gwo
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: hot carriers;indium compounds;III-V semiconductors;semiconductor epitaxial layers;wide band gap semiconductors, time resolved spectra, reflectivity, electron density, exchange interactions (electron)
Date: 2007-06-18
Issue Date: 2011-10-21T02:32:07Z
Publisher: Applied Physics Letters
Abstract: Abstract:Ultrafast carrier dynamics in InN epitaxial films was investigated by using femtosecond time-resolved pump-probe reflectivity measurements with a photon energy of 1.58 eV. The hot electron relaxation time decreased with increasing electron density (n), measuring at n−0.5. The result was contradictory to what was expected from the hot phonon effect and the screening effect. The authors attributed this result to the important role played by electron-electron scattering in hot electron relaxation.
Relation: 90(25), pp.252111-1-252111-3
URI: http://ntour.ntou.edu.tw/handle/987654321/27549
Appears in Collections:[光電科學研究所] 期刊論文

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