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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27542

Title: Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots
Authors: T. Y. Lin;D. Y. Lyu;J. Chang;J. L. Shen;W. C. Chou
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: zinc compounds;II-VI semiconductors;wide band gap semiconductors;semiconductor quantum dots;photoluminescence;electrical conductivity;band structure;excitons;self-assembly;semiconductor growth
Date: 2006-03-20
Issue Date: 2011-10-21T02:32:06Z
Publisher: Applied Physics Letters
Abstract: Abstract:Temperature and time evolution of the photoluminescence (PL) intensity of bimodal ZnTe/ZnSe type-II quantum dots (QDs) were investigated. A particular temperature dependence of PL was observed in large QDs. PL decay of small QDs is composed of a faster initial component and a slower tail component whereas PL decay of large QDs simply comprises a fast component. All phenomena could be understood consistently by considering charge carrier transfer mechanism, band-bending effect, and the existence of nonradiative centers in the bimodal type-II QD array. We show that excitons play an important role in the emission properties of a self-assembled type-II QD system.
Relation: 88(12), pp.121917-1-121917-3
URI: http://ntour.ntou.edu.tw/handle/987654321/27542
Appears in Collections:[光電科學研究所] 期刊論文

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