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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27528

Title: Spin dynamics of unit cells in magnetic random access memory
Authors: Jyh-Shinn Yang;Ching-Rang Chang;W. C. Lin;Denny D. Tang
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: Magnetic random access memory (MRAM);magnetic switching;icromagnetic simulation;patterned elements
Date: 2005-02
Issue Date: 2011-10-21T02:32:04Z
Publisher: IEEE Transactions on Magnetics(IEEE Trans. Magn.)
Abstract: Abstract:We present a micromagnetic study of the field-induced magnetic switching behavior of memory cells. The analytical expressions of writing fields generated by the current in a conducting
line are derived. The effective magnetic field acted on the memory cell from the narrow current-carrying line is larger than the wide one, which results in a smaller switching current threshold. Owing to the flat end shape, the oval cell requires a smaller switching current threshold than the elliptical one. Depending on the initial end domain configuration and the width of a conducting line, the reversal process of field-induced magnetic switching for the full-select cell can be classified into three types, i.e., O, U, and S modes. The mechanism governing the dynamic switching mode is explained.
Relation: 41(2), pp.879-882
URI: http://ntour.ntou.edu.tw/handle/987654321/27528
Appears in Collections:[光電科學研究所] 期刊論文

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