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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27526

Title: Origins of efficient green light emission in phase-separated InGaN quantum wells
Authors: Yen-Lin Lai;Chuan-Pu Liu;Yung-Hsiang Lin;Tao-Hung Hsueh;Ray-Ming Lin;Dong-Yuan Lyu;Zhao-Xiang Peng;Tai-Yuan Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: Condensed matter: electrical;magnetic and optical;Semiconductors;Surfaces;interfaces and thin films;Nanoscale science and low-D systems
Date: 2006-08-14
Issue Date: 2011-10-21T02:32:03Z
Publisher: Nanotechnology
Abstract: Abstract:Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516 nm) and the InGaN matrix (450 nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511 meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341 meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission.
Relation: 17(15), pp.3734-3739
URI: http://ntour.ntou.edu.tw/handle/987654321/27526
Appears in Collections:[光電科學研究所] 期刊論文

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