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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27525

Title: Origin of blue-band emission from Mg-doped Al0.15GaN0.85/ GaN Superlattices
Authors: T. Y. Lin;Y. M. Sheu;Y. F. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: aluminium compounds;gallium compounds;magnesium;III-V semiconductors;semiconductor superlattices;photoluminescence;visible spectra;metastable states;heat treatment;impurities
Date: 2006-02-20
Issue Date: 2011-10-21T02:32:03Z
Publisher: Applied Physics Letters
Abstract: Abstract:Investigation on the origin of blue luminescence from Mg-doped AlGaN/GaN superlattices is presented. The edge emission of the blue band shows an optical anisotropy with a line symmetry along the c axis as probed by the polarized luminescence. The blue band inherently exhibits a metastable behavior as demonstrated by the dc and ac photoluminescence measurements and the metastable behavior can be enhanced by thermal treatment. Our results establish that the underlying microstructure responsible for the blue luminescence in Mg-doped AlGaN/GaN SLs arises from the transitions involved in the threading structures decorated with Mg impurities/or other defects.
Relation: 88(8), pp.081912-1-081912-3
URI: http://ntour.ntou.edu.tw/handle/987654321/27525
Appears in Collections:[光電科學研究所] 期刊論文

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