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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27524

Title: Photoluminescence characteristics of InGaN light-emitting diodes grown on (0001) and (11-20) sapphire substrates
Authors: T.Y. Lin;G.M. Chen;D.Y. Lyu
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: A. III-nitride semiconductors;D. Optical properties;E. Photoluminescence
Date: 2007-04
Issue Date: 2011-10-21T02:32:03Z
Publisher: Solid State Commun
Abstract: Abstract:The temperature, excitation power and polarization dependence of ultraviolet (UV) photoluminescence (PL) of InGaN/AlGaN light-emitting diodes (LEDs) grown on (0001) and sapphire substrates were investigated. It appears that the LEDs grown on sapphire substrates show higher integrated luminescent efficiency than that of the LEDs grown on (0001) sapphire substrates. From the experimental data, it is believed that, for the InGaN LEDs having reduced InN molar fraction in the InGaN well layer, the PL characteristics are determined by the competition between the QW (or QD) radiative recombination, spatially localized radiative recombination and defect-induced nonradiative recombination. According to the results of polarization dependent edge-emitting PL measurements, the LEDs grown on sapphire substrates were found to exhibit a QW-like behaviour, while the LEDs grown on (0001) sapphire substrates were observed to show a mixed QW/QD-like behaviour. The polarization dependent edge emitting PL measurement is considered to be a highly sensitive technique for the characterization of the nanostructures of InGaN MQW LEDs.
PACS 78.55.-m;78.66.Fd;78.67.-n
Relation: 142(4), pp.237-241
URI: http://ntour.ntou.edu.tw/handle/987654321/27524
Appears in Collections:[光電科學研究所] 期刊論文

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