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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27520

Title: On the optical properties and microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N interlayers
Authors: Bing-Hong Shih;Jyh-Rong Gong;Shih-Wei Lin;Yu-Li Tsai;Wei-Tsai Liao;Tai-Yuan Lin;Ying-Te Lee;Jin-Gor Chang
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: A1. Characterization;B1. Nitrides;B2. Semiconducting gallium compounds
Date: 2005-04-01
Issue Date: 2011-10-21T02:32:02Z
Publisher: Journal of Crystal Growth
Abstract: Abstract:High-temperature (HT)-GaN films having low- temperature (LT)-Al0.8Ga0.2N interlayers were prepared on (0 0 0 1) sapphire substrates. The insertion of a LT-Al0.8Ga0.2N interlayer in a HT-GaN film was found to influence the optical and morphological properties of the film. Room temperature (RT) photoluminescence (PL) spectra of the HT-GaN films show strong and narrow near-band edge emissions when the films are inserted by LT-Al0.8Ga0.2N interlayers with thicknesses being less than critical layer thickness (CLT). Based on a plot of the line widths of RT near-band edge PL emissions of HT-GaN films versus the interlayer thicknesses, a CLT value of ∼10 nm was determined for the LT-Al0.8Ga0.2N interlayers. The LT-Al0.8Ga0.2N interlayer was observed to efficiently block threading dislocations (TDs) originated from the underlying GaN layer according to the studies of cross-sectional transmission electron microscopy (XTEM). PACS 61.72.Ef;81.15.Tv;81.05.Ea
Relation: 276(3-4), pp.362-366
URI: http://ntour.ntou.edu.tw/handle/987654321/27520
Appears in Collections:[光電科學研究所] 期刊論文

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