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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27517

Title: Reducing the critical switching current in the free layer of magnetic random access memory
Authors: Jyh-Shinn Yang;Ching-Ray Chang
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: Micromagnetic simulation;Toggle-mode switching;Synthetic antiferromatic bilayer;MRAM
Date: 2006-09
Issue Date: 2011-10-21T02:32:02Z
Publisher: Journal of Magnetism and Magnetic Materials
Abstract: Abstract:The switching behavior of synthetic antiferromagnetic (SyAF) bilayers in a toggle magnetic random access memory is investigated by micromagnetism. The strength of exchange coupling between the two sublayers significantly modifies the switching behavior of SyAF bilayers. The critical switching current decreases with decreasing the exchange coupling, and the low critical switching current can be achieved for SyAF bilayers solely based on the magnetostatic coupling. In addition, the optimization of the end shape in free layers and the ratio of width to height of conducting lines can further reduce the critical switching current. PACS 75.50.Mg;75.40.Gb;75.60.Jk;85.75.Dd
Relation: 304(1), pp.e288-e290
URI: http://ntour.ntou.edu.tw/handle/987654321/27517
Appears in Collections:[光電科學研究所] 期刊論文

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