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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27512

Title: Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition
Authors: Shih-Chen Shi;Chia-Fu Chen;Geng-Ming Hsu;Jih-Shang Hwang;Surojit Chattopadhyay;Zon-Huang Lan;Kuei-Hsien Chen;Li-Chyong Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: indium compounds;III-V semiconductors;wide band gap semiconductors;semiconductor growth;MOCVD;nanostructured materials;electron microscopy;X-ray diffraction;photoluminescence;radiation quenching
Date: 2005-11-14
Issue Date: 2011-10-21T02:32:01Z
Publisher: Applied Physics Letters
Abstract: Abstract:We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10° and length and base diameter of around 1 μm and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15–320 K.
Relation: 87(20), pp.203103-1-203103-3
URI: http://ntour.ntou.edu.tw/handle/987654321/27512
Appears in Collections:[光電科學研究所] 期刊論文

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