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题名: Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electron-hole recombination lifetime
作者: N. C. Chen;C. M. Lin;C. Shen;W. C. Lien;T. Y. Lin
贡献者: NTOU:Institute of Optoelectronic Sciences
日期: 2008-12-08
上传时间: 2011-10-21T02:32:01Z
出版者: Optics express
摘要: Abstract:The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.
關聯: 16(25), pp.20759-20773
显示于类别:[光電科學研究所] 期刊論文


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