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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27511

Title: Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electron-hole recombination lifetime
Authors: N. C. Chen;C. M. Lin;C. Shen;W. C. Lien;T. Y. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Date: 2008-12-08
Issue Date: 2011-10-21T02:32:01Z
Publisher: Optics express
Abstract: Abstract:The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.
Relation: 16(25), pp.20759-20773
URI: http://ntour.ntou.edu.tw/handle/987654321/27511
Appears in Collections:[光電科學研究所] 期刊論文

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