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Title: Optical and Structural characteristics of Zno films grown on (0001) sapphire substrates by ALD using DEZn and N2O
Authors: P. Y. Lin;J. R. Gong;P. C. Li;T. Y. Lin;D. Y. Lyu;D. Y. Lin;H. J. Lin;T. C. Li;K. J. Chang;W. J. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: A1. Surface structure;A1. X-ray diffraction;A3. Atomic layer deposition;B1. Zinc oxides;B2. Photoluminescence;B2. Semiconducting II–VI materials
Date: 2008-06-01
Issue Date: 2011-10-21T02:32:00Z
Publisher: Journal of Crystal Growth
Abstract: abstract:Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum. PACS 71.55.Gs;68.37.Hk;61.10.Nz
Relation: 310(12), pp.3024-3028
Appears in Collections:[Institute of Optoelectronic Sciences] Periodical Articles

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