Please use this identifier to cite or link to this item:
|Title: ||On the characteristics of AlGaN films grown on (111) and (001) Si substrates|
|Authors: ||Cheng-Liang Wang;Jyh-Rong Gong;Wei-Tsai Liao;Wei-Lin Wang;Tai-Yuan Lin;Chung-Kwei Lin|
|Contributors: ||NTOU:Institute of Optoelectronic Sciences|
|Keywords: ||A. AlGaN/Si;B. OMVPE;D. OM and TEM;D. Photoluminescence|
|Issue Date: ||2011-10-21T02:32:00Z
|Publisher: ||Solid State Communications|
|Abstract: ||Abstract:High Al-content AlxGa1−xN films were deposited on (001) and (111) Si substrates at 1000 °C using high temperature AlN buffer layers. Experimental results show that AlxGa1−xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1−xN/(111) Si samples but they were not observed in the AlxGa1−xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1−xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1−xN/(001) Si samples. According to the depth profiles of AlxGa1−xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the AlxGa1−xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1−xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.
|Relation: ||137(1-2), pp.63-66|
|Appears in Collections:||[光電科學研究所] 期刊論文|
Files in This Item:
There are no files associated with this item.
All items in NTOUR are protected by copyright, with all rights reserved.