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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27505

Title: On the characteristics of AlGaN films grown on (111) and (001) Si substrates
Authors: Cheng-Liang Wang;Jyh-Rong Gong;Wei-Tsai Liao;Wei-Lin Wang;Tai-Yuan Lin;Chung-Kwei Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: A. AlGaN/Si;B. OMVPE;D. OM and TEM;D. Photoluminescence
Date: 2006-01
Issue Date: 2011-10-21T02:32:00Z
Publisher: Solid State Communications
Abstract: Abstract:High Al-content AlxGa1−xN films were deposited on (001) and (111) Si substrates at 1000 °C using high temperature AlN buffer layers. Experimental results show that AlxGa1−xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1−xN/(111) Si samples but they were not observed in the AlxGa1−xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1−xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1−xN/(001) Si samples. According to the depth profiles of AlxGa1−xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the AlxGa1−xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1−xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.
Relation: 137(1-2), pp.63-66
URI: http://ntour.ntou.edu.tw/handle/987654321/27505
Appears in Collections:[光電科學研究所] 期刊論文

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