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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27500

Title: Morphological and luminescent characteristics of GaN dots deposited on AlN by alternate supply of TMG and NH3
Authors: Y. L. Tsai;J. R. Gong;T. Y. Lin;H. Y. Lin;Y. F. Chen;K. M. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: GaN dot;AFM;CL;PL
Date: 2005-03-15
Issue Date: 2011-10-21T02:31:59Z
Publisher: Applied Surface Science
Abstract: Abstract:GaN dots were deposited on AlN underlayers by alternate supply of trimethylgallium (TMG) and ammonia (NH3) in an inductively heated quartz reactor operated at atmospheric pressure. Various growth parameters including deposition temperature, TMG admittance and pulse time between TMG and NH3 exposures were proposed to investigate the influence of growth parameters on the size distribution of GaN dots. It appears that GaN dots with uniform size distribution can be achieved under certain growth conditions. Based on the study of atomic force microscopy (AFM), high deposition temperature was found to be in favor of forming large GaN dots with small dot density. Decrement of TMG flow rate or reduction in the number of growth cycle tends to enable the formation of GaN dots with small dot sizes. The results of room temperature (RT) cathodoluminescence (CL) measurements of the GaN dots exhibit an emission peak at 3.735 eV. A remarkable blue shift of GaN dot emission was observed by reduced temperature photoluminescence (PL) measurements. PACS 68.55.-a;81.15.Tv;81.05.Ea
Relation: 252(10), pp.3454-3459
URI: http://ntour.ntou.edu.tw/handle/987654321/27500
Appears in Collections:[光電科學研究所] 期刊論文

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