English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26988/38789
Visitors : 2318934      Online Users : 35
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27500

Title: Morphological and luminescent characteristics of GaN dots deposited on AlN by alternate supply of TMG and NH3
Authors: Y. L. Tsai;J. R. Gong;T. Y. Lin;H. Y. Lin;Y. F. Chen;K. M. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: GaN dot;AFM;CL;PL
Date: 2005-03-15
Issue Date: 2011-10-21T02:31:59Z
Publisher: Applied Surface Science
Abstract: Abstract:GaN dots were deposited on AlN underlayers by alternate supply of trimethylgallium (TMG) and ammonia (NH3) in an inductively heated quartz reactor operated at atmospheric pressure. Various growth parameters including deposition temperature, TMG admittance and pulse time between TMG and NH3 exposures were proposed to investigate the influence of growth parameters on the size distribution of GaN dots. It appears that GaN dots with uniform size distribution can be achieved under certain growth conditions. Based on the study of atomic force microscopy (AFM), high deposition temperature was found to be in favor of forming large GaN dots with small dot density. Decrement of TMG flow rate or reduction in the number of growth cycle tends to enable the formation of GaN dots with small dot sizes. The results of room temperature (RT) cathodoluminescence (CL) measurements of the GaN dots exhibit an emission peak at 3.735 eV. A remarkable blue shift of GaN dot emission was observed by reduced temperature photoluminescence (PL) measurements. PACS 68.55.-a;81.15.Tv;81.05.Ea
Relation: 252(10), pp.3454-3459
URI: http://ntour.ntou.edu.tw/handle/987654321/27500
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat
index.html0KbHTML251View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback