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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27497

Title: Investigation on the correlation between the crystalline and optical properties of InGaN using near-filed scanning optical microscopy
Authors: T. Y. Lin;P. K. Wei;E. H. Lin;T. L. Tseng;R. Chang
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: indium compounds;gallium compounds;III-V semiconductors;wide band gap semiconductors;semiconductor epitaxial layers;photoluminescence;domains;near-field scanning optical microscopy
Date: 2007-05-09
Issue Date: 2011-10-21T02:31:58Z
Publisher: Electrochem. Solid State Lett
Abstract: Abstract:We have performed the polarization-modulation near-field scanning optical microscopy (PM-NSOM) and photoluminescence NSOM (PL-NSOM) measurements on the InGaN alloy epitaxial layer. Spatial variations in the crystalline quality of nanoscale domains in InGaN film were found by PM-NSOM. It was found that the luminescent property of InGaN correlates closely with the local crystalline quality. Regions with better crystallinity have higher luminescence intensity and longer emission wavelength, while regions with poorer crystallinity exhibit a luminescence of lower intensity and shorter emission wavelength. We show that the combination of PM-NSOM and PL-NSOM is a useful diagnostic tool to the correlation between crystalline and optical properties of the nanostructures.
Relation: 10(7), pp.H217-H219
URI: http://ntour.ntou.edu.tw/handle/987654321/27497
Appears in Collections:[光電科學研究所] 期刊論文

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