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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27492

Title: Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells on a-plane GaN
Authors: E. Y. Lin;C. Y. Chen;T. S. Lay;T. C. Wang;J. D. Tsay;P. X. Peng;T. Y. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: 42.25.Ja;78.55.Cr;78.67.De;81.15.Gh
Date: 2008-05
Issue Date: 2011-10-21T02:31:57Z
Publisher: Phys. Stat. Sol. (c)
Abstract: Abstract:Internal Quantum Efficiency (IQE) and anisotropic optical polarization of InGaN/GaN multiple quantum wells (MQW) grown on a -plane (11-20) GaN film were investigated in comparison with c -plane (0001) InGaN/GaN LED samples. In the temperature-dependent and power-dependent photoluminescence (PL) spectra, the IQE for a -plane and c -plane InGaN/GaN MQW were obtained. The anisotropic polarization has an angle of 120o between the maximum and minimum components for the a -plane InGaN/GaN MQW.
Relation: 5(6), pp.2111-2113
URI: http://ntour.ntou.edu.tw/handle/987654321/27492
Appears in Collections:[光電科學研究所] 期刊論文

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