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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27488

Title: Local Oxidation of InN and GaN Using an Atomic Force Microscope
Authors: Jih Shang Hwang;Zhan Shuo Hu;Zen Yu You;Tai Yuan Lin;Chin Lian Hsiao;Li Wei Tu
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Date: 2006-02-14
Issue Date: 2011-10-21T02:31:56Z
Publisher: Nanotechnology
Abstract: Abstract:Local oxidations of InN and GaN were realized using an atomic force microscope (AFM). InN was oxidized easily by traditional AFM oxidation to ~40 nm oxide height. The same AFM methodology was applied to GaN, which exhibited only minimum oxidation even at 10 V and high humidity. However, further experimentation led to successful nano-oxidation of GaN by two different techniques. In the first technique, a ~10 nm gold film was deposited by sputtering onto the clean GaN substrate. The gold film reduced the AFM oxidation circuit resistance and increased the oxyanion driving current (oxidation current), thereby allowing AFM oxidation with heights reaching ~25 nm at a humidity of 70%, but with a danger of gold contamination of the oxide. To eliminate this danger, additional experiments were performed in which the gold film on the GaN was removed in a small area, after which AFM oxidation was successfully performed in the area with gold removed with oxidation heights comparable to those of the gold-covered GaN. The techniques in this study make possible fast, chemical-free and contamination-free AFM nano-oxidation for metal–oxide–semiconductor field effect transistors based on two important nitrides.
Relation: 17(3), pp.859-863
URI: http://ntour.ntou.edu.tw/handle/987654321/27488
Appears in Collections:[光電科學研究所] 期刊論文

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