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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27486

Title: Infrared lasing in InN nanobelts
Authors: Ming-Shien Hu;Geng-Ming Hsu;Kuei-Hsien Chen;Chia-Ju Yu;Hsu-Cheng Hsu;Li-Chyong Chen;Jih-Shang Hwang;Lu-Sheng Hong;Yang-Fang Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: indium compounds;nanostructured materials;stimulated emission;optical pumping;wide band gap semiconductors;infrared sources;MOCVD;semiconductor growth;optical materials
Date: 2007-03-19
Issue Date: 2011-10-21T02:31:56Z
Publisher: Applied Physics Letters
Abstract: abstract:Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and were enclosed by ±(001) and ±(10) planes. The infrared lasing action was observed at 20 K in the InN nanobelts grown on an amorphous silicon nitride coated silicon substrate by continuous wave laser pumping.
Relation: 90(12), pp.123109-1-123109-3
URI: http://ntour.ntou.edu.tw/handle/987654321/27486
Appears in Collections:[光電科學研究所] 期刊論文

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