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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27485

Title: Hot carrier photoluminescence in InN epilayers
Authors: M. D. Yang;Y. P. Chen;G. W. Shu;J. L Shen;S. C. Hung;G. C. Chi;T. Y. Lin;Y. C. Lee;C. T. Chen;C. H. Ko
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Date: 2008
Issue Date: 2011-10-21T02:31:56Z
Publisher: Applied Physics A
Abstract: abstract:The energy relaxation of electrons in InN epilayers is investigated by excitation- and electric field-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature of the hot carriers. It was found that the electron temperature variation can be explained by amodel in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The LO-phonon lifetime is fitted to be 0.89 ps, which is higher than the theoretical phonon lifetime. This deviation is attributed to the presence of the non-equilibrium hot-phonon effects. PACS 78.55.Cr; 78.66.Fd; 61.66.Fn; 78.20.Jq; 63.20.kd
Relation: 90(1), pp.123-127
URI: http://ntour.ntou.edu.tw/handle/987654321/27485
Appears in Collections:[光電科學研究所] 期刊論文

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