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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27484

Title: Hot Photoluminescence in γ-In2Se3 Nanorods
Authors: M. D. Yang;C. H. Hu;J. L. Shen;S. M. Lan;P. J. Huang;G. C. Chi;K. H. Chen;L. C. Chen;T. Y. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: InSe nanorods;Hot photoluminescence;Energy relaxation
Date: 2008-11-11
Issue Date: 2011-10-21T02:31:56Z
Publisher: Nanoscale Research Letters
Abstract: Abstract:The energy relaxation of electrons in c-In2Se3 nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature (Te) of the hot electrons. The Te variation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The high-quality c-In2Se3 nanorods may be a promising material for the photovoltaic devices.
Relation: 3(11), pp.427-430
URI: http://ntour.ntou.edu.tw/handle/987654321/27484
Appears in Collections:[光電科學研究所] 期刊論文

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