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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27470

Title: Improvement in the Characteristics of GaN-Based Light-Emitting Diodes by Inserting AlGaN–GaN Short-Period Superlattices in GaN Underlayers
Authors: Cheng-Liang Wang;Jyh-Rong Gong;Member;IEEE;Ming-Fa Yeh;Bor-Jen Wu;Wei-Tsai Liao;Tai-Yuan Lin;Chung-Kwei Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: GaN;light-emitting diode (LED);short-period superlattice (SPSL)
Date: 2006-07-45
Issue Date: 2011-10-21T02:31:53Z
Publisher: IEEE Photonics Technology Letters
Abstract: Abstract:We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current–voltage (I–V) curves indicate that GaN-based LEDs having pseudomorphic Al0 3Ga0 7N(2 nm)– GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al0 3Ga0 7N(2 nm)–GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al0 3Ga0 7N(2 nm)–GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I–V characteristics were achieved.
Relation: 18(14), pp.1497-1499
URI: http://ntour.ntou.edu.tw/handle/987654321/27470
Appears in Collections:[光電科學研究所] 期刊論文

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