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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27468

Title: Growth of AlGaN and GaN films on Al2O3 substrates and the influence of V/III ratio on the properties of GaN films
Authors: Wei-Tsai Liao;Jyh-Rong Gong;Shih-Wei Lin;Cheng-Liang Wang;Tai-Yuan Lin;Keh-Chang Chen;Yi-Cheng Cheng;Wen-Jen Lind
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: A1. Characterization;B1. Nitrides;B2. Semiconducting gallium compounds
Date: 2006-01-01
Issue Date: 2011-10-21T02:31:53Z
Publisher: Journal of Crystal Growth
Abstract: Abstract:AlGaN and GaN films were grown on Al2O3 substrates at elevated temperatures by alternate supply of trimethylgallium (TMG) with (or without) trimethylaluminum (TMA) in group III flow and NH3 in group V stream. The optical characteristics of GaN films deposited on () Al2O3 substrates were found to be comparable to those of GaN films grown on (0 0 0 1) Al2O3 substrates under the same growth conditions. It appears that an increment of V/III ratio allows to improve the morphological and optical properties of a GaN film deposited on the () Al2O3 substrate. The best quality GaN films were achieved at a V/III ratio of 10 400 with a quenched yellow luminescence and an enhanced room temperature (RT) near band edge photoluminescence (PL) emission having a linewidth of ∼120 meV.
PACS 78.55.Cr;81.15.Tv;81.05.Ea
Relation: 286(1), pp.28-31
URI: http://ntour.ntou.edu.tw/handle/987654321/27468
Appears in Collections:[光電科學研究所] 期刊論文

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