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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27466

Title: Growth and properties of single-phase γ-In2Se3 thin films on (1 1 1) Si substrate by AP-MOCVD using H2Se precursor
Authors: D.Y. Lyu;T.Y. Lin;J.H. Lin;S.C. Tseng;J.S. Hwang;H.P. Chiang;C.C. Chiang;S.M. Lan
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: InSe;MOCVD;Photoluminescence
Date: 2007-07-15
Issue Date: 2011-10-21T02:31:52Z
Publisher: Solar Energy Materials and Solar Cells
Abstract: Abstract:A set of In2Se3 films was grown on (1 1 1) Si substrate with AlN buffer by metalorganic chemical vapor deposition (MOCVD) using H2Se as the metalogramic precursors for Se. The In2Se3 films on (1 1 1) Si substrate were pinhole-free with homogeneous and lamellar structures. It was found that by properly controlling the substrate temperatures, single-phase γ-In2Se3 films with fairly good optical properties can be well fabricated. Photoluminescence spectra of single-phase γ-In2Se3 show exciton emissions at 2.140 eV at 10 K. The band gap of single-phase γ-In2Se3 at room temperature is estimated at 1.943 eV.
Relation: 91(10), pp.888-891
URI: http://ntour.ntou.edu.tw/handle/987654321/27466
Appears in Collections:[光電科學研究所] 期刊論文

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