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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27455

Title: Effect of Buffer Layers on Electrical, Optical and Structural Properties of AlGaN/GaN Heterostructures Grown on Si
Authors: Chin-An Chang;Shao-Tang Lien;Chen-Han Liu;Chaun-Feng Shih;Nie-Chuan Chen;Pen-Hsiu Chang;Hien-Chiu Peng;Tze-Yu Tang;Wei-Chieh Lien;Yu-Hsiang Wu;Kun-Ta Wu;Ji-Wei Chen;Chi-Te Liang;Yang-Fang Chen;Tong-Uan Lu;Tai-Yuan Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
Date: 2006-04-15
Issue Date: 2011-10-21T02:31:50Z
Publisher: Japanese Journal Applied Physics(Jpn. J. Appl. Phys.)
Abstract: Abstract:AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor–acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown.
Relation: 45(4A), pp.2516-2518
URI: http://ntour.ntou.edu.tw/handle/987654321/27455
Appears in Collections:[光電科學研究所] 期刊論文

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