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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27454

Title: Effects of the material polarity on the green of InGaN/GaN multiple quantum wells
Authors: Yen-Lin Lai;Chuan-Pu Liu;Yung-Hsiang Lin;Ray-Ming Lin;Dong-Yuan Lyu;Zhao-Xiang Peng;Tai-Yuan Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: indium compounds;gallium compounds;III-V semiconductors;wide band gap semiconductors;semiconductor quantum wells;MOCVD coatings;phase separation;transmission electron microscopy;photoluminescence;carrier mobility;time resolved spectra
Date: 2006-10-09
Issue Date: 2011-10-21T02:31:50Z
Publisher: Applied Physics Letters
Abstract: Abstract:Green-light-emission InGaN/GaN multiple quantum wells (MQWs) with different polarities were grown by metal organic chemical vapor deposition. A clear phase separation was observed both in the Ga- and N-polarity samples by high resolution transmission electron microscopy, corresponding to two InGaN-related emissions (In-rich dots and an InGaN matrix) seen in photoluminescence spectra. The dot-related emission in the Ga-polarity MQWs shows stronger carrier localization, as well as a weak influence of defects and temperature insensitivity, when compared to the N-polarity MQWs. In addition, efficient carrier transport, from the low-indium InGaN matrix to high-indium In-rich dots, was observed in the Ga-polarity structure, enhancing the function of quantum-dot structures with Ga polarity, and resulting in a high quantum yield of green light emission.
Relation: 89(15), pp.151906-1-151906-3
URI: http://ntour.ntou.edu.tw/handle/987654321/27454
Appears in Collections:[光電科學研究所] 期刊論文

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