National Taiwan Ocean University Institutional Repository:Item 987654321/27452
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 28595/40626
造访人次 : 4208151      在线人数 : 55
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27452

题名: Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers
作者: Cheng-Liang Wang;Jyh-Rong Gong;Wei-Tsai Liao;Chung-Kwei Lin;Tai-Yuan Lin
贡献者: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
关键词: 320 Nitrides;430 Semiconductors;91 Deposition process;345 Optical properties
日期: 2005-12-22
上传时间: 2011-10-21T02:31:50Z
出版者: Thin Solid Films
摘要: Abstract:AlxGa1−xN films having various Al-contents were grown on (111) Si substrates over a temperature range of 800∼1000 °C. It was found that crack free AlxGa1−xN films were achieved when the films were grown at 800 °C. High temperature (HT) GaN films were also deposited on (111) Si substrates using 800 °C grown AlxGa1−xN buffer layers with different thickness and composition combinations. The best HT GaN film was achieved on (111) Si substrate by process optimization with an 800 °C grown 180 nm-thick Al0.58Ga0.42N buffer layer. Room temperature photoluminescence (PL) spectrum of the HT GaN film shows a strong near band edge emission having a linewidth of 100 meV and a quenched yellow luminescence. It is believed that the use of intermediate temperature AlxGa1−xN buffer layer is beneficial to accommodate the misfit strain between HT GaN film and (111) Si substrate.
關聯: 493(1-2), pp.135-138
URI: http://ntour.ntou.edu.tw/handle/987654321/27452
显示于类别:[光電科學研究所] 期刊論文

文件中的档案:

档案 描述 大小格式浏览次数
index.html0KbHTML308检视/开启


在NTOUR中所有的数据项都受到原著作权保护.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈