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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27452

Title: Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers
Authors: Cheng-Liang Wang;Jyh-Rong Gong;Wei-Tsai Liao;Chung-Kwei Lin;Tai-Yuan Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: 320 Nitrides;430 Semiconductors;91 Deposition process;345 Optical properties
Date: 2005-12-22
Issue Date: 2011-10-21T02:31:50Z
Publisher: Thin Solid Films
Abstract: Abstract:AlxGa1−xN films having various Al-contents were grown on (111) Si substrates over a temperature range of 800∼1000 °C. It was found that crack free AlxGa1−xN films were achieved when the films were grown at 800 °C. High temperature (HT) GaN films were also deposited on (111) Si substrates using 800 °C grown AlxGa1−xN buffer layers with different thickness and composition combinations. The best HT GaN film was achieved on (111) Si substrate by process optimization with an 800 °C grown 180 nm-thick Al0.58Ga0.42N buffer layer. Room temperature photoluminescence (PL) spectrum of the HT GaN film shows a strong near band edge emission having a linewidth of 100 meV and a quenched yellow luminescence. It is believed that the use of intermediate temperature AlxGa1−xN buffer layer is beneficial to accommodate the misfit strain between HT GaN film and (111) Si substrate.
Relation: 493(1-2), pp.135-138
URI: http://ntour.ntou.edu.tw/handle/987654321/27452
Appears in Collections:[光電科學研究所] 期刊論文

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