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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27447

Title: Electron transport in In-rich In xGa1- xN films
Authors: Shih-Kai Lin;Kun-Ta Wu;Chao-Ping Huang;C.-T. Liang;Y. H. Chang;Y. F. Chen;P. H. Chang;N. C. Chen;C. A. Chang;H. C. Peng;C. F. Shih;K. S. Liu;T. Y. Lin
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Date: 2005-02-15
Issue Date: 2011-10-21T02:31:49Z
Publisher: Journal of Applied Physics(J. Appl. Phys)
Abstract: Abstract:We have performed electrical transport measurements on metal-organic vapor phase epitaxy grown In-rich InxGa1−xN (x = 1, 0.98, and 0.92) films. Within the experimental error, the electron density in InGaN films is temperature independent over a wide temperature range (4 K ⩽ T ⩽ 285 K). Therefore, InxGa1−xN (0.92 ⩽ x ⩽ 1) films can be regarded as degenerate semiconductor systems. The experimental results demonstrate that electron transport in In-rich InxGa1−xN (x = 1, 0.98, and 0.92) films is metalliclike. This is supported by the temperature dependence of the density, resistivity, and mobility which is similar to that of a metal. We suggest that over the whole measuring temperature range residue imperfection scattering limits the electron mobility in In-rich InxGa1−xN (x = 1, 0.98, and 0.92) films.
Relation: 97(4), pp.046101-1-046101-3
URI: http://ntour.ntou.edu.tw/handle/987654321/27447
Appears in Collections:[光電科學研究所] 期刊論文

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