English  |  正體中文  |  简体中文  |  Items with full text/Total items : 28588/40619
Visitors : 4198800      Online Users : 54
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27445

Title: Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers
Authors: G W Shu;P F Wu;Y W Liu;J S Wang;J L Shen;T Y Lin;P J Pong;G C Chi;H J Chang;Y F Chen;Y C Lee
Contributors: NTOU:Institute of Optoelectronic Sciences
Date: 2006-10-25
Issue Date: 2011-10-21T02:31:48Z
Abstract: Abstract:We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN.The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN.
Relation: 18(42), pp.L543–L549
URI: http://ntour.ntou.edu.tw/handle/987654321/27445
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback