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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27445

Title: Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers
Authors: G W Shu;P F Wu;Y W Liu;J S Wang;J L Shen;T Y Lin;P J Pong;G C Chi;H J Chang;Y F Chen;Y C Lee
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Date: 2006-10-25
Issue Date: 2011-10-21T02:31:48Z
Publisher: JOURNAL OF PHYSICS: CONDENSED MATTER
Abstract: Abstract:We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN.The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN.
Relation: 18(42), pp.L543–L549
URI: http://ntour.ntou.edu.tw/handle/987654321/27445
Appears in Collections:[光電科學研究所] 期刊論文

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