National Taiwan Ocean University Institutional Repository:Item 987654321/27442
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26988/38789
Visitors : 2346825      Online Users : 30
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27442

Title: Direct evidence of nanocluster-induced luminescence in InGaN epifilms
Authors: H. J. Chang;C. H. Chen;Y. F. Chen;T. Y. Lin;L. C. Chen;K. H. Chen;Z. H. Lan
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: indium compounds;gallium compounds;III-V semiconductors;wide band gap semiconductors;semiconductor epitaxial layers;cathodoluminescence;X-ray chemical analysis;X-ray diffraction;scanning electron microscopy
Date: 2005-01-10
Issue Date: 2011-10-21T02:31:48Z
Publisher: Applied Physics Letters
Abstract: Abstract:x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectrometry, and cathodoluminescence measurements have been employed to study the correlation between optical and structural properties in InGaN epitaxial films. In-rich quantum dots were found to be dispersed throughout the film. By the combination of these measurements, we clearly identify that brighter luminescence arises from In-rich regions while dimmer luminescence corresponds to the Ga-rich matrix regions.
Relation: 86(2), pp.021911-1-021911-03
URI: http://ntour.ntou.edu.tw/handle/987654321/27442
Appears in Collections:[Institute of Optoelectronic Sciences] Periodical Articles

Files in This Item:

File Description SizeFormat
index.html0KbHTML152View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback