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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27442

Title: Direct evidence of nanocluster-induced luminescence in InGaN epifilms
Authors: H. J. Chang;C. H. Chen;Y. F. Chen;T. Y. Lin;L. C. Chen;K. H. Chen;Z. H. Lan
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: indium compounds;gallium compounds;III-V semiconductors;wide band gap semiconductors;semiconductor epitaxial layers;cathodoluminescence;X-ray chemical analysis;X-ray diffraction;scanning electron microscopy
Date: 2005-01-10
Issue Date: 2011-10-21T02:31:48Z
Publisher: Applied Physics Letters
Abstract: Abstract:x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectrometry, and cathodoluminescence measurements have been employed to study the correlation between optical and structural properties in InGaN epitaxial films. In-rich quantum dots were found to be dispersed throughout the film. By the combination of these measurements, we clearly identify that brighter luminescence arises from In-rich regions while dimmer luminescence corresponds to the Ga-rich matrix regions.
Relation: 86(2), pp.021911-1-021911-03
URI: http://ntour.ntou.edu.tw/handle/987654321/27442
Appears in Collections:[光電科學研究所] 期刊論文

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