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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27440

Title: Characterization of nonlinear absorption of InN epitaxial films with femtosecond pulsed transmission Z-scan measurements
Authors: Tsong-Ru Tsai;Tsung-Han Wu;Jung-Cheng Liao;Tai-Huei Wei;Hai-Pang Chiang;Jih-Shang Hwang;Din-Ping Tsai;Yang-Fang Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: high-speed optical techniques;III-V semiconductors;indium compounds;light absorption;nonlinear optics;optical materials;semiconductor epitaxial layers;wide band gap semiconductors
Date: 2009-03-15
Issue Date: 2011-10-21T02:31:47Z
Publisher: Journal of Applied Physics
Abstract: abstract:The femtosecond pulsed Z-scan measurements of the resonant nonlinear optical absorption of the InN epitaxial films in the range of 720–790 nm were reported. The absorption saturation behavior was found to gradually decrease with increasing photon energy. The nonlinear optical absorption cross sections of the InN films were estimated and the values are found to be in good agreement with the calculations based on the band-filling model. These results are relevant for the future development of nonlinear optical devices based on InN.
Relation: 105(6), pp.066101-1-066101-3
URI: http://ntour.ntou.edu.tw/handle/987654321/27440
Appears in Collections:[光電科學研究所] 期刊論文

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