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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27438

Title: Direct evidence of compositional pulling effect in AlxGa1−xN epilayers
Authors: H. Y. Lin;Y. F. Chen;T. Y. Lin;C. F. Shih;K. S. Liu;N. C. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: A1. Cathodoluminescence;A1. Pulling effect;B1. AlGaN
Date: 2006-04-15
Issue Date: 2011-10-21T02:31:47Z
Publisher: Journal of Crystal Growth
Abstract: abstract:We report the investigation on the compositional-pulling effect of crystalline AlxGa1−xN/(0 0 0 1) sapphire epilayers by cross-sectional cathodoluminescence (CL) and energy-dispersive X-ray (EDX) analyses. Direct evidence for the compositional distribution was found in the AlxGa1−xN (0<x<0.3) layers, which accompany the different optical phenomena arising from the change of the band gap. The band gap variation of the 1.7 μm AlxGa1−xN epilayers with the Al content rising from x=11% to 30% was observed. It is consistent with the result of depth-resolved CL spectra acquired with increasing electron energies, which can also be used to reveal the spatial composition distribution along the growth direction. We emphasize here that the selective-wavelength CL image is a very powerful tool in exploring the correlation between the specific emission and the composition of inhomogeneous alloys. PACS 68. 55.Jk;78. 60.Hk;78. 66.Fd
Relation: 290(1), pp.225-228
URI: http://ntour.ntou.edu.tw/handle/987654321/27438
Appears in Collections:[光電科學研究所] 期刊論文

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