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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27437

Title: Concentration dependence of carrier localization in InN epilayers
Authors: G. W. Shu;P. F. Wu;M. H. Lo;J. L. Shen;T. Y. Lin;H. J. Chang;Y. F. Chen;C. F. Shih;C. A. Chang;N. C. Chen
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: indium compounds;III-V semiconductors;semiconductor epitaxial layers;carrier density;impurity states;photoluminescence;time resolved spectra;radiation quenching;conduction bands
Date: 2006-09-25
Issue Date: 2011-10-21T02:31:47Z
Publisher: Applied Physics Letters
Abstract: Abstract:The authors studied the concentration dependence of carrier localization in InN epilayers using time-resolved photoluminescence (PL). Based on the emission-energy dependence of the PL decays and the PL quenching in thermalization, the localization energy of carriers in InN is found to increase with carrier concentration. The dependence of carrier concentration on the localization energy of carriers in InN can be explained by a model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states. They suggest that carrier localization originates from the potential fluctuations of randomly located impurities.
Relation: 89(13), pp.131913
URI: http://ntour.ntou.edu.tw/handle/987654321/27437
Appears in Collections:[光電科學研究所] 期刊論文

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