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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/27428

Title: The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers
Authors: G. W. Shu;C. K. Wang;J. S. Wang;J. L. Shen;R. S. Hsiao;W. C. Chou;J. F. Chen;T. Y. Lin;C. H. Ko;C. M. Lai
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Date: 2006-12-14
Issue Date: 2011-10-21T02:31:44Z
Publisher: Nanotechnology
Abstract: Abstract:The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs.
Relation: 17(23), pp.5722-5725
URI: http://ntour.ntou.edu.tw/handle/987654321/27428
Appears in Collections:[光電科學研究所] 期刊論文

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