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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/26494

Title: Low-temperature Crystallization of Sol–gel-derived Lead Zirconate Titanate Thin Films using 2.45 GHz Microwaves
Authors: Ankam Bhaskar;T.H. Chang;H.Y. Chang;S.Y. Cheng
Contributors: 國立臺灣海洋大學:輪機工程學系
Keywords: Microwave annealing;Surface roughness;Dielectric properties;Hysteresis loops;Lead zirconate titanate
Date: 2007-01-22
Issue Date: 2011-10-20T08:36:12Z
Publisher: Thin Solid Films
Abstract: Abstract:Lead zirconate titanate (PZT) thin films of thickness 420 nm were deposited on Pt/Ti/SiO2/Si substrate using a spin coating sol–gel precursor solution, and then annealed using 2.45 GHz microwaves at a temperature of 450 °C for 30 min. The film has a high perovskite content and high crystallinity with a full width at half maximum of 0.35°. The surface roughness of the PZT thin film was 1.63 nm. Well-saturated ferroelectric properties were obtained with a remanent polarization of 46.86 μC/cm2 and coercive field of 86.25 kV/cm. The film also exhibited excellent dielectric properties with a dielectric constant of 1140 and a dissipation factor of 0.03. These properties are superior to those obtained by conventional annealing at a temperature of 700 °C for 30 min.
Relation: 515(5), pp.2891–2896
URI: http://ntour.ntou.edu.tw/handle/987654321/26494
Appears in Collections:[輪機工程學系] 期刊論文

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