National Taiwan Ocean University Institutional Repository:Item 987654321/26488
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题名: Effect of Microwave Annealing Temperatures on Lead Zirconate Titanate Thin Films
作者: Ankam Bhaskar;H Y Chang;T H Chang;S Y Cheng
贡献者: 國立臺灣海洋大學:輪機工程學系
日期: 2007-10
上传时间: 2011-10-20T08:36:07Z
出版者: Nanotechnology
摘要: Abstract:Lead zirconate titanate (Pb1.1(Zr0.52Ti0.48)O3) thin films of thickness 260 nm on Pt/Ti/SiO2/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700 °C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450 °C and the film was fully crystallized. The secondary (again pyrochlore) phase was observed in the PZT thin films, which were annealed above 550 °C. The surface morphologies were changed above 550 °C of the PZT thin films due to the secondary phase. Higher dielectric constant (εr) and lower dielectric loss coercive field (Ec) were achieved for the 450 °C film than for the other annealed films.
關聯: 18(39), pp.395704
URI: http://ntour.ntou.edu.tw/handle/987654321/26488
显示于类别:[輪機工程學系] 期刊論文

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