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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/26488

Title: Effect of Microwave Annealing Temperatures on Lead Zirconate Titanate Thin Films
Authors: Ankam Bhaskar;H Y Chang;T H Chang;S Y Cheng
Contributors: 國立臺灣海洋大學:輪機工程學系
Date: 2007-10
Issue Date: 2011-10-20T08:36:07Z
Publisher: Nanotechnology
Abstract: Abstract:Lead zirconate titanate (Pb1.1(Zr0.52Ti0.48)O3) thin films of thickness 260 nm on Pt/Ti/SiO2/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700 °C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450 °C and the film was fully crystallized. The secondary (again pyrochlore) phase was observed in the PZT thin films, which were annealed above 550 °C. The surface morphologies were changed above 550 °C of the PZT thin films due to the secondary phase. Higher dielectric constant (εr) and lower dielectric loss coercive field (Ec) were achieved for the 450 °C film than for the other annealed films.
Relation: 18(39), pp.395704
URI: http://ntour.ntou.edu.tw/handle/987654321/26488
Appears in Collections:[輪機工程學系] 期刊論文

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