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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/24307

Title: Thermomechanical Response Analysis of Lithographic Mask Structure Using FEM
Authors: D. C. Li;S. W. Chyuan;J. T. Chen;C. Y. Sun
Contributors: NTOU:Department of Harbor and River Engineering
Date: 1995
Issue Date: 2011-10-20T08:11:14Z
Abstract: abstract:The influence of heavy X-ray irradiation on the thermal and mechanical behavior of a silicon-tungsten (Si-W) mask structure in semiconductor microlithography was examined by numerical simulation. To approach the realistic physical conditions in X-ray lithographic exposure, a relatively large three-dimensional finite-element model with 6 480 elements and 7 760 grids was created to simulate the Si-W mask under thermal loading. The finite-element calculation was performed by using the commercially available MSC/NASTRAN program with IDEAS pre-post processor system on a powerful CONVEX C201 minisupercomputer. Investigations were focused on the temperature distributions, the thermal stress profiles, and the thermal displacement contour in the Si-W mask structure. The simulated results can provide both qualitative and quantitative information for optimal mask design to minimize in-plane thermal distortion.
Relation: 38(4), pp.563-571
URI: http://ntour.ntou.edu.tw/handle/987654321/24307
Appears in Collections:[河海工程學系] 期刊論文

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